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RF2815 Datasheet(PDF) 2 Page - RF Micro Devices |
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RF2815 Datasheet(HTML) 2 Page - RF Micro Devices |
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2 / 10 page ![]() 2 of 10 RF2815 DS100211 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit VDD 3.6 V IDD 20 mA Maximum Input Power - CW, VDD=2.85V, IDD=9mA +15 dBm PDISS 72 mW Max Voltage on RF Output (Pin 8) +5 V TJ (Junction Temperature) 150 °C Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Parameter Specification Unit Condition Min. Typ. Max. High Current Mode VDD=+2.85, VSD=2.6V, IDD=8mA, R2=3k Freq=1575.42MHz. Nominal Operating Condi- tions (unless otherwise specified) Gain (G) 11 13.5 dB Noise Figure (NF)* 0.85 1.3 dB Input P1dB Compressed Power (P1dB) -2 dBm Input 3rd Order Intercept Point (2-tone @ fc±2.5Hz) 9dBm Input Return Loss (S11) -8 dB Output Return Loss (S22) -13 dB Reverse Isolation (S12) -24 dB Cell Band Rejection (Relative to 1575GHz at 827.5Hz 50 54 dBc PCS Band Rejection (Relative to 1575GHz at 1885MHz) 39 42 dBc Supply DC Current at Shutdown (SD) Voltage VSD=2.6V (IDD) 815 mA ISH (Shutdown Current) 0.1 uA Low Current Mode VDD=+2.85, VSD=1.67V, IDD=4.5mA, R2=3k Freq=1575.42MHz. Nominal Oper- ating Conditions (unless otherwise specified) Gain (G) 12 dB Noise Figure (NF)* 1 dB Input P1dB Compressed Power (P1dB) 0dBm Input 3rd Order Intercept Point (2-tone @ fc±2.5Hz) 7dBm Input Return Loss (S11) -7 dB Output Return Loss (S22) -11 dB Reverse Isolation (S12) -24 dB Cell Band Rejection (Relative to 1575GHz at 827.5Hz 50 55 dBc PCS Band Rejection (Relative to 1575GHz at 1885MHz) 39 42 dBc Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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