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RF1604 Datasheet(PDF) 2 Page - RF Micro Devices |
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RF1604 Datasheet(HTML) 2 Page - RF Micro Devices |
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2 / 9 page ![]() 2 of 9 RF1604 DS120125 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit VDD 3.0 V Maximum Power Handling (6 to 1 VSWR over Temperature) +36 dBm Operating Temperature -30 to +85 °C Storage Temperature -35 to +100 °C Parameter Specification Unit Condition Min. Typ. Max. Electrical Characteristics Active Mode:VHIGH>1.8V,VLOW<0.3V; Temp=25°C; VDD=2.5V PIN=35dBm@0.9GHzor33dBm@1.98GHz; All RF ports terminated to ZO=50. Insertion Loss RF1, RF2, RF3, RF4-ANT 0.40 0.50 dB 0.5GHz to 1GHz 0.45 0.55 dB 1.0GHz to 2.0GHz 0.45 0.55 dB 2.0GHz to 2.5GHz 0.7 0.85 dB 2.5GHz to 3.5GHz Isolation RF1, RF2, RF3, RF4-ANT 36 40 dB 0.5GHz to 1.0GHz 31 35 dB 1.0GHz to 2.0GHz 30 33 dB 2.0GHz to 2.5GHz 23 28 dB 2.5GHz to 3.5GHz RF Port Return Loss RF1, RF2, RF3, RF4-ANT 23 30 dB 0.5GHz to 3.5GHz, All RF ports in Insertion Loss state. 900MHz Harmonics Second Harmonic (2f0) -85 -75 dBc PIN=35dBm Third Harmonic (3f0)-90 -75 dBc 1980MHz Harmonics Second Harmonic (2f0) -85 -75 dBc PIN=33dBm Third Harmonic (3f0)-90 -75 dBc IIP2 RF1, RF2, RF3, RF4-ANT Cell 115 120 dBm Tone 1: 836.5MHz at 26dBm, Tone 2: 1718MHz at -20dBm, Receive Freq: 881.5MHz RF1, RF2, RF3, RF4-ANT AWS 115 120 dBm Tone 1: 1732.5MHz at 26dBm, Tone 2: 3865MHz at -20dBm, Receive Freq: 2132.5MHz RF1, RF2, RF3, RF4-ANT PCS 115 120 dBm Tone 1: 1880MHz at 26dBm, Tone 2: 3840MHz at -20dBm, Receive Freq: 1960MHz Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. |
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