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RFHA1043 Datasheet(PDF) 3 Page - RF Micro Devices

Part # RFHA1043
Description  150W GaN Power Amplifier
PDF  11 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFHA1043 Datasheet(HTML) 3 Page - RF Micro Devices

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RF Micro Devices Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421
DS131023
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 11
RFHA1043
Parameter
Specification
Unit
Condition
Min
Typ
Max
Capacitance
CRSS
11.6
pF
VG = -8V, VD = 0V
CISS
109
pF
COSS
29.8
pF
RF Functional Test
Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance
in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW
VGS(Q)
-3.2
V
VD = 48V, ID = 600mA
Gain
13
15.6
dB
IS95 (9 channel model, 9.8dB PAR at 0.01% CCDF), POUT = 46dBm,
f = 1.85GHz
Drain Efficiency
30
35
%
Input Return Loss
-6.5
-3
dB
PAR
6
6.7
dB
RF Typical Performance
Test Conditions: VDSQ = 48V, IDQ = 600mA, T = 25°C, Performance
in a standard tuned test fixture, ACP: ±1.23MHz at 1.5MHz BW
Gain
15.8
dB
3GPP (TM1, 7.5dB PAR at 0.01% CCDF), POUT = 45dBm, f = 1.85GHz
Drain Efficiency
30
%
Input Return Loss
-6.8
dB
Adjacent Channel Power
-37
dBc
Power Gain at P3dB
13.6
dB
CW, POUT = 52dBm, f = 1.85GHz
Output Power at P3dB
52
dBm
Drain Efficiency at P3dB
54
%



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