RF Micro Devices Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421

DS131023

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

RF MICRO DEVICES

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RFHA1043

150W GaN Power Amplifier

1.2GHz to 1.85GHz

The RFHA1043 is optimized for applications in the 1.2GHz to

1.85GHz frequency band. Using an advanced 48V high power

density gallium nitride (GaN) semiconductor process optimized for

high peak to average ratio applications, these high performance

amplifiers achieve high efficiency and flat gain over a broad

frequency range in a single amplifier design. The RFHA1043 is an

input matched GaN transistor packaged in an air cavity ceramic

package, which provides excellent thermal stability. Ease of

integration is accomplished through the incorporation of simple

optimized matching networks external to the package that provide

wideband gain, efficiency, and linearizable performance in a

single amplifier.

Functional Block Diagram

Ordering Information

RFHA1043S2

Sample bag with 2 pieces

RFHA1043SB

Bag with 5 pieces

RFHA1043SQ

Bag with 25 pieces

RFHA1043SR

Short reel with 50 pieces

RFHA1043TR13

13” Reel with 300 pieces

RFHA1043PCBA-410

Fully assembled evaluation board

Package: Flanged Ceramic, 2 pin,

RF400-2

Features

■

Advanced GaN HEMT Technology

■

Peak Power 150W

■

Advanced Heat-Sink Technology

■

Single Circuit for 1.2GHz to

1.85GHz

■

48V Modulated Typical

Performance





Gain 15.5dB



Drain Efficiency 30%



ACP-30dBc

■

48V CW Typical Broadband

Performance





Gain 13.5dB



Drain Efficiency 51%

■

-40°C to 85°C Operating

Temperature

■

Optimized for Video Bandwidth

and Minimized Memory Effects

■

Large Signal Models Available

Applications

■

Civilian and Military Radar

■

Public Mobile Radios

■

Industrial, Scientific, and Medical

RFHA1043

RFHA1043