Features

1 of 7

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA3563Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA3563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. Only two DC-blocking capacitors, a

bias resistor, and an optional RF choke are required for operation.

0

32

Gain & Return Loss vs. Frequency

V

-10

24

GAIN

20

16

IRL

-20

16

ORL

-30

8

-40

0

012345

Frequency (GHz)



High Gain: 25.5dB at

850MHz



Cascadable 50

Gain Block



typ. at 1950MHz



Low Noise Figure: 2.7dB typ.

at 1950MHz



Low Current Draw: 35mA typ.



Single Voltage Supply Opera-

tion

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS111011



Package: SOT-363

SGA3563ZDC

to 5000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

23.5

25.5

27.5

dB

850MHz

19.5

21.5

23.5

dB

1950MHz

20.0

dB

2400MHz

Output Power at 1dB Compression

13.0

dBm

850MHz

11.0

12.5

dBm

1950MHz

Output Third Intercept Point

24.0

dBm

850MHz

22.5

24.5

dBm

1950MHz

Bandwidth Determined by Return

Loss

5000

MHz

>10dB

Input Return Loss

11.2

15.5

dB

1950MHz

Output Return Loss

11.2

20.0

dB

1950MHz

Noise Figure

2.7

3.7

dB

1950MHz

Device Operating Voltage

3.0

3.25

3.5

V

Device Operating Current

31

35

39

mA

Thermal Resistance

(Junction - Lead)

255

°C/W