BCV62 datasheet(4/14 Pages) PHILIPS

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BCV62

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Product data sheet

Rev. 4 — 26 July 2010

4 of 14

NXP Semiconductors

BCV62

PNP general-purpose double transistors

[1]

VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2]

VBE decreases by about 2 mV/K with increasing temperature.

[3]

Device, without emitter resistors, mounted on an FR4 PCB.

VBEsat

base-emitter

saturation voltage

IC = −10 mA;

IB = −0.5 mA

[1] -

−700 -

IC = −100 mA;

IB = −5mA

[1] -

−850 -

VBE

base-emitter voltage

IC = −2mA; VCE = −5V

[2]

−600 −650 −750 mV

IC = −10 mA; VCE = −5V [2] --

−820 mV

transition frequency

VCE = −5V;

IC = −10 mA;

f=100MHz

100

MHz

collector capacitance

VCB = −10 V;

IE =ie =0 A

-4.5

-pF

noise figure

VCE = −5V;

IC = −200 μA; RS =2kΩ;

f = 1 kHz; B = 200 Hz

--10

Transistor TR2

VEBS

emitter-base voltage

VCB =0V; IE = −250 mA

−1.5

VCB =0V; IE = −10 μA

−400 --mV

hFE

DC current gain

VCE = −5V; IC = −2mA

BCV62

100

800

BCV62A

100

250

BCV62B

220

475

BCV62C

420

800

Transistors TR1 and TR2

IC1/IE2

current matching

IE2 = −0.5 mA;

VCE1 = −5V;

Tamb ≤ 25 °C

0.7

1.3

Tamb ≤ 150 °C

0.7

1.3

IE2

emitter current 2

VCE1 = −5V

[3] --

−5mA

Table 8.

Characteristics …continued

Tj =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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