CHA7215

X-band High Power Amplifier

Ref : DSCHA72159287 - 14 Oct 09

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics on test fixture

Tamb = 20°C, Vd=8V, Id (Quiescent) = 2.3A, Drain Pu lse width = 25µs, Duty cycle = 10%

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency

8.5

11.5

GHz

G

Small signal gain

25

28

31

dB

G_T

Small signal gain variation versus

temperature

-0.05

dB/°C

RLin

Input Return Loss

10

dB

RLout

Output Return Loss

12

dB

Psat

Saturated output power

39.5

dBm

Psat_T

Saturated output power variation versus

temperature

-0.01

dB/°C

PAE_4dBc

Power added efficiency @4dBc

34

%

Id_4dBc

Supply drain current @ 4dBc

3.3

4.4

A

Vd1, Vd2, Vd3

Drain supply voltage (2)

8

V

Id

Supply quiescent current (1)

2.3

A

Vg1, Vg2, Vg3

Gate supply voltage

-2.2

V

(1) Parameter can be adjusted by tuning of Vg.

(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on

robustness see Maximum ratings)

Absolute Maximum Ratings (1)

Tamb = 20°C

Symbol

Parameter

Values

Unit

Cmp

Compression level (2)

6

dBc

Vd

Supply voltage with RF input power

9

V

Vd

Supply voltage without RF input power

10

V

Id

Supply quiescent current

3

A

Id_sat

Supply current in saturation

4.8

A

Vg

Supply voltage

-1.1

V

Tj

Maximum junction temperature

175

°C

Tstg

Storage temperature range

-55 to +125

°C

Top

Operating temperature range

-40 to +80

°C

(1)

Operation of this device above anyone of these parameters may cause

permanent damage.

(2)

For higher compression the level limit can be increased by decreasing the voltage

Vd using the rate 0.5 V / dBc