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BLM2004NE Datasheet(PDF) 1 Page - SHANGHAI BELLING CO., LTD.

Part # BLM2004NE
Description  N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  BELLING [SHANGHAI BELLING CO., LTD.]
Direct Link  http://www.belling.com.cn
Logo BELLING - SHANGHAI BELLING CO., LTD.

BLM2004NE Datasheet(HTML) 1 Page - SHANGHAI BELLING CO., LTD.

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V2.1
= 22m
= 17m
www.belling.com.cn
Page1
BLM2004NE
Pb Free Product
N-Channel Enhancement Mode Power MOSFET
Description
The BLM2004NE uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =6A
ESD Rating: 2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●PWM application
●Load switch
Schematic diagram
Marking and pin Assignment
SOT23-6L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2004NE
BLM2004NE
SOT23-6L
Ø330mm
12mm
3000 units
Absolute Maximum Ratings (TA=25℃
℃
℃
℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
Drain Current-Continuous
ID
6
A
Drain Current-Pulsed (Note 1)
IDM
30
A
Maximum Power Dissipation
PD
1.25
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
/W
℃
=2.5V
=4.5V
Typ.RDS(ON)
Ω @ VGS
Typ.RDS(ON)
Ω @ VGS


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