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MX29F080 Datasheet(PDF) 1 Page - Macronix International |
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MX29F080 Datasheet(HTML) 1 Page - Macronix International |
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1 / 38 page  1 P/N:PM0579 REV. 1.6, NOV, 21, 2002 MX29F080 8M-BIT[1024Kx8]CMOSEQUALSECTORFLASHMEMORY PRELIMINARY FEATURES • 1,048,576 x 8 byte mode only • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 30mA maximum active current - 0.2uA typical standby current • Command register architecture - Byte Programming (7us typical) - Sector Erase of 16 equal sector with 64K-Byte each • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address • Erase suspend/Erase Resume - Suspends sector erase operation to read data from, or program data to, another sector that is not being erased, then resumes the erase. TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maxi- mum EPROM compatibility. MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the combination of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling. The MX29F080 uses a 5.0V±10% VCC supply to perform the High Reliability Erase and auto Program/ Erase algorithms. The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up pro- tection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V. GENERAL DESCRIPTION The MX29F080 is a 8-mega bit Flash memory organized as 1024K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-vola- tile random access memory. The MX29F080 is pack- aged in 40-pin TSOP or 44-pin SOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29F080 offers access time as fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F080 has separate chip enable (CE) and output enable (OE ) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29F080 uses a command register to manage this functionality. The command register allows for 100% • Status Reply - Data polling & Toggle bit for detection of program and erase operation completion. • Ready/Busy (RY/BY) - Provides a hardware method of detecting program and erase operation completion. • Sector Group protect/chip unprotect for 5V/12V sys- tem. • Sector Group protection - Hardware protect method for each group which con- sists of two adjacent sectors - Temporary sector group unprotect allows code changes in previously locked sectors • 10,000 minimum erase/program cycles • Latch-up protected to 100mA from -1V to VCC+1V • Low VCC write inhibit is equal to or less than 3.2V • Package type: - 40-pin TSOP or 44-pin SOP • Compatibility with JEDEC standard - Pinout and software compatible with single-power supply Flash |
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