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BFP520 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # BFP520
Description  Low Noise Silicon Bipolar RF Transistor
PDF  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BFP520 Datasheet(HTML) 1 Page - Infineon Technologies AG

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2015-10-12
1
BFP520
1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• Low noise amplifier designed for low voltage
applications, ideal for 1.2 V or 1.8 V supply voltage
• Common e.g. in cordless phones, satellite
receivers and oscillators up to 22 GHz
• High gain and low noise at high frequencies
due to high transit frequency fT = 45 GHz
• Easy to use Pb-free (RoHS compliant) and
halogen free industry standard package with
visible leads
• Qualification report according to AEC-Q101
available
ESD
(Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP520
APs
1=B
2=E
3=C
4=E
-
-
SOT343
Maximum Ratings
at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
VCEO
2.5
2.4
V
Collector-emitter voltage
VCES
10
Collector-base voltage
VCBO
10
Emitter-base voltage
VEBO
1
Collector current
IC
50
mA
Base current
IB
5
Total power dissipation1)
TS ≤ 105 °C
Ptot
125
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
-55 ... 150
1TS is measured on the emitter lead at the soldering point to pcb


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