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BFP520 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFP520 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page ![]() 2015-10-12 1 BFP520 1 2 3 4 Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz • Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP520 APs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage TA = 25 °C TA = -55 °C VCEO 2.5 2.4 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 50 mA Base current IB 5 Total power dissipation1) TS ≤ 105 °C Ptot 125 mW Junction temperature TJ 150 °C Storage temperature TStg -55 ... 150 1TS is measured on the emitter lead at the soldering point to pcb |
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