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16F628 Datasheet(PDF) 139 Page - Microchip Technology |
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16F628 Datasheet(HTML) 139 Page - Microchip Technology |
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139 / 168 page ![]() 2002 Microchip Technology Inc. Preliminary DS40044A-page 137 PIC16F627A/628A/648A TABLE 17-1: DC Characteristics: PIC16F627A/628A/648A (Industrial, Extended) PIC16LF627A/628A/648A (Industrial) DC Characteristics Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial and -40°C ≤ TA ≤ +125°C for extended Operating voltage V DD range as described in DC spec Table 17-2 and Table 17-3 Parameter No. Sym Characteristic Min Typ† Max Units Conditions Data EEPROM Memory D120 D120A D121 D122 D123 D124 E D E D V DRW T DEW T RETD T REF Endurance Endurance V DD for read/write Erase/Write cycle time Characteristic Retention Number of Total Erase/Write Cycles before Refresh(1) 100K 10K V MIN — 100 1M 1M 100K — 4 — 10M — 5.5 8* — — E/W E/W V ms Year E/W -40 °C ≤ TA ≤ 85°C 85°C ≤ TA ≤ 125°C V MIN = Minimum operating voltage Provided no other specifications are violated -40 °C to +85°C Program FLASH Memory D130 D130A D131 D132 D132A D133 D133A D134 E P E P V PR V IE V PEW T IE T PEW T RETP Endurance Endurance V DD for read V DD for Block erase V DD for write Block Erase cycle time Write cycle time Characteristic Retention 10K 1000 V MIN 4.5 V MIN — — 100 100K 10K — — — 4 2 — — — 5.5 5.5 5.5 8* 4* — E/W E/W V V V ms ms year -40 °C ≤ TA ≤ 85°C 85°C ≤ TA ≤ 125°C V MIN = Minimum operating voltage V MIN = Minimum operating voltage V DD > 4.5V Provided no other specifications are violated * These parameters are characterized but not tested. † Data in “Typ” column is at 5.0 V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: Refer to Section 13.7 for a more detailed discussion on data EEPROM endurance. |
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