Vishay Siliconix

SiR484DP

Document Number: 69024

S-82664-Rev. A, 03-Nov-08

www.vishay.com

1

N-Channel 20-V (D-S) MOSFET

FEATURES

•

Halogen-free

•

Package with Low 1.07 mm Profile

•

Optimized

for

High-Side

Synchronous

Rectifier

Operation

•

•

100 % UIS Tested

APPLICATIONS

•

Notebook CPU Core

- High-Side Switch

•

POL

PRODUCT SUMMARY

a, g

20

20

7.1 nC

20

Ordering Information: SiR484DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 70 °C/W.

g. Package Limited.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

± 20

A

Pulsed Drain Current

50

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

L = 0.1 mH

22

Avalanche Energy

24

mJ

Maximum Power Dissipation

29.8

W

19.0

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 10 s

27

32

°C/W

Maximum Junction-to-Case (Drain)

Steady State

3.5

4.2