SIR484DP datasheet(4/13 Pages) TFUNK

4 / 13 page

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Document Number: 69024

S-82664-Rev. A, 03-Nov-08

Vishay Siliconix

SiR484DP

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

TJ = 25 °C

VSD -Source-to-Drain Voltage (V)

0.7

1.0

1.3

1.6

1.9

- 50

- 25

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.006

0.012

0.018

0.024

0.030

012

910

TJ =25 °C

TJ = 125 °C

VGS - Gate-to-Source Voltage (V)

0.01

0.1

100

1000

Time (s)

Safe Operating Area, Junction-to-Ambient

100

0.1

100

0.01

0.1

TA = 25 °C

Single Pulse

100 µA

Limited byRDS(on)*

BVDSS Limited

1ms

10 ms

100 ms

10 s

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

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