KAI-2020 datasheet(9/37 Pages) ONSEMI

9 / 37 page

KAI−2020

www.onsemi.com

The following table summarizes the previous explanation

on the output amplifier’s operation. Certain trade−offs can

be made based on application needs such as Dynamic Range

or Pixel frequency.

Table 4.

Pixel Frequency

(MHz)

Reset Clock

Amplitude (V)

Output Gate (V)

Saturation Signal

(mV)

Saturation Signal

(Ke−)

Dynamic Range

(dB)

Notes

−2.0

600

−2.0

600

−3

1200

−3

2400

2. 80,000 electrons achievable in summed interlaced or binning modes.

ESD Protection

Figure 8. ESD Protection

H1SL

H2SL

H1BL

H2BL

OGR/

OGL

H1SR

H2SR

H1BR

H2BR

ESD

VSUB

The ESD protection on the KAI−2020 is implemented

using bipolar transistors. The substrate (VSUB) forms the

common collector of all the ESD protection transistors. The

ESD pin is the common base of all the ESD protection

transistors. Each protected pin is connected to a separate

emitter as shown in Figure 8.

The ESD circuit turns on if the base−emitter junction

voltage exceeds 17 V. Care must be taken while operating

the image sensor, especially during the power on sequence,

to not forward bias the base−emitter or base−collector

junctions. If it is possible for the camera power up sequence

to forward bias these junctions then diodes D1 and D2

should be added to protect the image sensor. Put one diode

D1 between the ESD and VSUB pins. Put one diode D2 on

each pin that may forward bias the base−emitter junction.

The diodes will prevent large currents from flowing through

the image sensor.

Note that diodes D1 and D2 are added external to the

KAI−2020. These diodes are optional in camera design.

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