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KAI-04022 Datasheet(PDF) 21 Page - ON Semiconductor |
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KAI-04022 Datasheet(HTML) 21 Page - ON Semiconductor |
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21 / 43 page ![]() KAI−04022 www.onsemi.com 21 Table 10. DC BIAS OPERATING CONDITIONS Description Symbol Minimum Nominal Maximum Unit Maximum DC Current Output Gate (Notes 4, 5) OG −3.0 −2.0 −1.5 V 1 mA Reset Drain (Note 4) RD 11.5 12.0 12.5 V 1 mA Output Amplifier Supply (Note 3) VDD 14.5 15.0 15.5 V 1 mA Ground GND 0.0 0.0 0.0 V Substrate (Notes 1, 7) VSUB 8.0 VAB 17.0 V ESD Protection (Note 2) ESD −9.5 −9.0 −8.0 V Output Bias Current (Note 6) IOUT 0.0 5.0 10.0 mA 1. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value VAB is set such that the photodiode charge capacity is 40,000 electrons. 2. VESD must be equal to FDL and more negative than H1L, H2L and RL during sensors operation AND during camera power turn on. 3. One output, unloaded. The maximum DC current is for one output unloaded and is shown as ISS in Figure 18. This is the maximum current that the first two stages of one output amplifier will draw. This value is with VOUT disconnected. 4. May be changed in future versions. 5. Output gate voltage level must be set to –3 V for 40,000 – 80,000 electrons output in summed interlaced or binning modes. 6. One output. 7. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions. Figure 18. Output Architecture VDD VOUT Floating Diffusion IDD Source Follower #1 Source Follower #2 Source Follower #3 IOUT ISS |
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