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KAI-04022 Datasheet(PDF) 21 Page - ON Semiconductor

Part # KAI-04022
Description  INTERLINE CCD IMAGE SENSOR
PDF  43 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-04022 Datasheet(HTML) 21 Page - ON Semiconductor

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KAI−04022
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Table 10. DC BIAS OPERATING CONDITIONS
Description
Symbol
Minimum
Nominal
Maximum
Unit
Maximum
DC Current
Output Gate (Notes 4, 5)
OG
−3.0
−2.0
−1.5
V
1
mA
Reset Drain (Note 4)
RD
11.5
12.0
12.5
V
1
mA
Output Amplifier Supply (Note 3)
VDD
14.5
15.0
15.5
V
1 mA
Ground
GND
0.0
0.0
0.0
V
Substrate (Notes 1, 7)
VSUB
8.0
VAB
17.0
V
ESD Protection (Note 2)
ESD
−9.5
−9.0
−8.0
V
Output Bias Current (Note 6)
IOUT
0.0
5.0
10.0
mA
1. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value VAB is set such that
the photodiode charge capacity is 40,000 electrons.
2. VESD must be equal to FDL and more negative than H1L, H2L and RL during sensors operation AND during camera power turn on.
3. One output, unloaded. The maximum DC current is for one output unloaded and is shown as ISS in Figure 18. This is the maximum current
that the first two stages of one output amplifier will draw. This value is with VOUT disconnected.
4. May be changed in future versions.
5. Output gate voltage level must be set to –3 V for 40,000 – 80,000 electrons output in summed interlaced or binning modes.
6. One output.
7. Refer to Application Note Using Interline CCD Image Sensors in High Intensity Visible Lighting Conditions.
Figure 18. Output Architecture
VDD
VOUT
Floating
Diffusion
IDD
Source
Follower
#1
Source
Follower
#2
Source
Follower
#3
IOUT
ISS



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