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LM5035CSQX/NOPB Datasheet(PDF) 16 Page - Texas Instruments |
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LM5035CSQX/NOPB Datasheet(HTML) 16 Page - Texas Instruments |
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16 / 35 page ![]() HO SR1 LO SR2 T1 T2 T1 T2 Maximum Duty Cycle = 2 TS - T1 1 TS LM5035C SNVS631C – JANUARY 2010 – REVISED MARCH 2013 www.ti.com The HB and VCC capacitors should be placed close to the pins of the LM5035C to minimize voltage transients due to parasitic inductances since the peak current sourced to the MOSFET gates can exceed 1.25A. The recommended value of the HB capacitor is 0.01 µF or greater. A low ESR / ESL capacitor, such as a surface mount ceramic, should be used to prevent voltage droop during the HO transitions. The maximum duty cycle for each output is equal to or slightly less than 50% due to any programmed sync rectifier delay. The programmed sync rectifier delay is determined by the DLY pin resistor. If the COMP pin is open circuit, the outputs will operate at maximum duty cycle. The maximum duty cycle for each output can be calculated with the following equation: where • TS is the period of one complete cycle for either the HO or LO outputs • T1 is the programmed sync rectifier delay (3) For example, if the oscillator frequency is 200 kHz, each output will cycle at 100 kHz (TS = 10 µs). Using no programmed delay, the maximum duty cycle at this frequency is calculated to be 50%. Using a programmed sync rectifier delay of 100 ns, the maximum duty cycle is reduced to 49%. Because there is no fixed dead-time in the LM5035C, it is recommended that the delay pin resistor not be less than 10K. Internal delays, which are not ensured, are the only protection against cross conduction if the programmed delay is zero, or very small. Figure 17. HO, LO, SR1 and SR2 Timing Diagram Synchronous Rectifier Control Outputs (SR1 & SR2) Synchronous rectification (SR) of the transformer secondary provides higher efficiency, especially for low output voltage converters. The reduction of rectifier forward voltage drop (0.5V - 1.5V) to 10mV - 200mV VDS voltage for a MOSFET significantly reduces rectification losses. In a typical application, the transformer secondary winding is center tapped, with the output power inductor in series with the center tap. The SR MOSFETs provide the ground path for the energized secondary winding and the inductor current. Figure 17 shows that the SR2 MOSFET is conducting while HO enables power transfer from the primary. The SR1 MOSFET must be disabled during this period since the secondary winding connected to the SR1 MOSFET drain is twice the voltage of the center tap. At the conclusion of the HO pulse, the inductor current continues to flow through the SR1 MOSFET body diode. Since the body diode causes more loss than the SR MOSFET, efficiency can be improved by minimizing the T2 period while maintaining sufficient timing margin over all conditions (component tolerances, etc.) to prevent shoot-through current. When LO enables power transfer from the primary, the SR1 MOSFET is enabled and the SR2 MOSFET is off. During the time that neither HO nor LO is active, the inductor current is shared between both the SR1 and SR2 MOSFETs which effectively shorts the transformer secondary and cancels the inductance in the windings. The SR2 MOSFET is disabled before LO delivers power to the secondary to prevent power being shunted to ground. The SR2 MOSFET body diode continues to carry about half the inductor current until the primary power raises the SR2 MOSFET drain voltage and reverse biases the body diode. Ideally, dead-time T1 would be set to the minimum time that allows the SR MOSFET to turn off before the SR MOSFET body diode starts conducting. 16 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM5035C |
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