Advance Information

MT89L85

13

* Exceeding these values may cause permanent damage. Functional operation under these conditions is not implied.

‡ Typical figures are at 25

‡ Typical figures are at 25

*

Absolute Maximum Ratings*

Parameter

Symbol

Min

Max

Units

-0.3

5.0

V

2

Voltage on Digital Inputs

V

3

Current at Digital Outputs

20

mA

4

Storage Temperature

-55

+125

°C

5

Package Power Dissipation

1W

Characteristics

Sym

Min

Max

Units

Test Conditions

1

Operating Temperature

-40

25

+85

°C

2

Positive Supply

3.0

3.3

3.6

V

3

Input High Voltage

V

4

Input High Voltage on 5V

Tolerant Inputs

5.5

V

5

Input Low Voltage

V

Characteristics

Sym

Min

Max

Units

Test Conditions

1

I

N

P

U

T

S

Supply Current

4

7

mA

Outputs unloaded

2

Input High Voltage

V

3

Input Low Voltage

V

4

Input Leakage

5

µAV

5

Input Pin Capacitance

10

pF

6

O

U

T

P

U

T

S

Output High Voltage

7

Output High Current

10

mA

8

Output Low Voltage

0.4

V

9

Output Low Current

5

mA

10

High Impedance Leakage

5

µAV

11

Output Pin Capacitance

10

pF

Characteristics

Sym

Level

Units

Test Conditions

1

CMOS Threshold Voltage

V

2

CMOS Rise/Fall Threshold Voltage high

V

3

CMOS Rise/Fall Threshold Voltage low

V