ATP401 datasheet(2/7 Pages) ONSEMI

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ATP401

No. A2167-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

Zero-Gate Voltage Drain Current

IDSS

VDS=60V, VGS=0V

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.2

2.6

Forward Transfer Admittance

| yfs |

VDS=10V, ID=50A

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=50A, VGS=10V

2.8

3.7

mΩ

RDS(on)2

ID=50A, VGS=4.5V

3.7

5.2

mΩ

Input Capacitance

Ciss

VDS=20V, f=1MHz

17000

Output Capacitance

Coss

1000

Reverse Transfer Capacitance

Crss

770

Turn-ON Delay Time

td(on)

See Fig.2

110

Rise Time

580

Turn-OFF Delay Time

td(off)

840

Fall Time

710

Total Gate Charge

VDS=36V, VGS=10V, ID=100A

300

Gate-to-Source Charge

Qgs

Gate-to-Drain “Miller” Charge

Qgd

Diode Forward Voltage

VSD

IS=100A, VGS=0V

0.9

1.2

Fig.1 Unclamped Inductive Switching Test Circuit

Fig.2 Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ATP401-TL-H

ATPAK

3,000pcs./reel

Pb Free and Halogen Free

50Ω

10V

≥50Ω

VDD

ATP401

P.G

50Ω

ID=50A

RL=0.72Ω

VDD=36V

VOUT

ATP401

VIN

PW≤10μs

D.C.≤1%

10V

VIN

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