EMH2407 datasheet(2/7 Pages) ONSEMI

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Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

Zero-Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

0.5

1.3

Forward Transfer Admittance

| yfs |

VDS=10V, ID=3A

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=3A, VGS=4.5V

mΩ

RDS(on)2

ID=3A, VGS=4V

mΩ

RDS(on)3

ID=1.5A, VGS=2.5V

mΩ

Input Capacitance

Ciss

VDS=10V, f=1MHz

580

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

310

Rise Time

1020

Turn-OFF Delay Time

td(off)

3000

Fall Time

2250

Total Gate Charge

VDS=10V, VGS=4.5V, ID=6A

6.3

Gate-to-Source Charge

Qgs

0.83

Gate-to-Drain “Miller” Charge

Qgd

1.9

Diode Forward Voltage

VSD

IS=6A, VGS=0V

0.78

1.2

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

EMH2407-TL-H

EMH8

3,000pcs./reel

Pb Free and Halogen Free

D.C.

≤1%

PW=10μs

P.G

50Ω

ID=3A

RL=3.33Ω

VDD=10V

VOUT

EMH2407

VIN

4.5V

VIN

Rg=2kΩ

EMH2407

No. A1141-2/7

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