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ISO5451DW Datasheet(PDF) 15 Page - Texas Instruments

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Part # ISO5451DW
Description  High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
PDF  38 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

ISO5451DW Datasheet(HTML) 15 Page - Texas Instruments

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ISO5451
ISO5451
www.ti.com
SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015
9 Detailed Description
9.1 Overview
The ISO5451 is an isolated gate driver for IGBTs and MOSFETs. Input CMOS logic and output power stage are
separated by a capacitive, silicon dioxide (SiO2), isolation barrier.
The IO circuitry on the input side interfaces with a micro controller and consists of gate drive control and RESET
(RST) inputs, READY (RDY) and FAULT (FLT) alarm outputs. The power stage consists of power transistors to
supply 2.5-A pull-up and 5-A pull-down currents to drive the capacitive load of the external power transistors, as
well as DESAT detection circuitry to monitor IGBT collector-emitter overvoltage under short circuit events. The
capacitive isolation core consists of transmit circuitry to couple signals across the capacitive isolation barrier, and
receive circuitry to convert the resulting low-swing signals into CMOS levels. The ISO5451 also contains under
voltage lockout circuitry to prevent insufficient gate drive to the external IGBT, and active output pull-down
feature which ensures that the gate-driver output is held low, if the output supply voltage is absent. The ISO5451
also has an active Miller clamp which can be used to prevent parasitic turn-on of the external power transistor,
due to Miller effect, for unipolar supply operation.
9.2 Functional Block Diagram
Copyright © 2015, Texas Instruments Incorporated
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