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ISO5451DW Datasheet(PDF) 25 Page - Texas Instruments |
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ISO5451DW Datasheet(HTML) 25 Page - Texas Instruments |
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25 / 38 page ![]() DESAT GND2 VCC2 15V 1 F DDST VEE2 220 pF CLAMP 3 1,8 5 4 6 2 7 15V 1 F RG NC OUT ISO5451 VFW RS VFW-Inst 15 9, 16 11 10 12 13 14 IN- IN+ RDY 10k 10k VCC1 0.1 F GND1 3V - 5V 10R ISO5451 C 15 9, 16 11 10 12 13 14 IN- IN+ RDY 10k 10k VCC1 0.1 F GND1 3V - 5V 10R ISO5451 C FLT RST FLT RST ISO5451 www.ti.com SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015 10.2.2.6 Auto-Reset In this case, the gate control signal at IN+ is also applied to the RST input to reset the fault latch every switching cycle. Incorrect RST makes output go low. A fault condition, however, the gate driver remains in the latched fault state until the gate control signal changes to the 'gate low' state and resets the fault latch. If the gate control signal is a continuous PWM signal, the fault latch will always be reset before IN+ goes high again. This configuration protects the IGBT on a cycle by cycle basis and automatically resets before the next 'on' cycle. Figure 47. Auto Reset for Non-inverting and Inverting Input Configuration 10.2.2.7 DESAT Pin Protection Switching inductive loads causes large instantaneous forward voltage transients across the freewheeling diodes of IGBTs. These transients result in large negative voltage spikes on the DESAT pin which draw substantial current out of the device. To limit this current below damaging levels, a 100- Ω to 1-kΩ resistor is connected in series with the DESAT diode. Further protection is possible through an optional Schottky diode, whose low forward voltage assures clamping of the DESAT input to GND2 potential at low voltage levels. Figure 48. DESAT Pin Protection with Series Resistor and Schottky Diode Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 25 Product Folder Links: ISO5451 |
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