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ISO5451DW Datasheet(PDF) 17 Page - Texas Instruments

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Part # ISO5451DW
Description  High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver with Active Safety Features
PDF  38 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

ISO5451DW Datasheet(HTML) 17 Page - Texas Instruments

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ISO5451
www.ti.com
SLLSEO1B – JUNE 2015 – REVISED DECEMBER 2015
Feature Description (continued)
9.3.6 High Voltage Feature Description
9.3.6.1 Package Insulation and Safety-Related Specifications
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
L(I01)
Minimum air gap (clearance)
Shortest terminal-to-terminal distance through air
8
mm
Shortest terminal-to-terminal distance across the package
L(I02)(1)
Minimum external tracking (creepage)
8
mm
surface
DIN EN 60112 (VDE 0303-11);
Tracking resistance (comparative
IEC 60112;
CTI
600
V
tracking index)
Material Group I according to IEC 60664-1;
UL 746A
(1)
Per JEDEC package dimensions.
NOTE
Creepage and clearance requirements should be applied according to the specific
equipment isolation standards of an application. Care should be taken to maintain the
creepage and clearance distance of a board design to ensure that the mounting pads of
the isolator on the printed-circuit board do not reduce this distance.
Creepage and clearance on a printed-circuit board become equal in certain cases.
Techniques such as inserting grooves and/or ribs on a printed circuit board are used to
help increase these specifications.
9.3.6.2 Insulation Characteristics
PARAMETER
TEST CONDITIONS
SPECIFICATION
UNIT
DTI
Distance through the insulation
Minimum internal gap (internal clearance)
21
μm
1000
VRMS
VIOWM
Maximum isolation working voltage
Time dependent dielectric breakdown (TDDB) Test
1420
VDC
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
VIORM
Maximum repetitive peak isolation voltage
1420
Method A, After Input/Output safety test subgroup 2/3,
VPR = 1.2 x VIORM, t = 10 sec,
1704
Partial discharge < 5 pC
Method A, After environmental tests subgroup 1,
VPR
Input to output test voltage
VPR = 1.6 × VIORM, t = 10 sec (qualification)
2272
Partial discharge < 5 pC
VPK
Method B1, 100% Production test,
VPR = 1.875 × VIORM, t = 1 sec
2662
Partial discharge < 5 pC
VTEST = VIOTM, t = 60 sec (qualification), t = 1 sec (100%
VIOTM
Maximum Transient isolation voltage
8000
production)
Test method per IEC 60065, 1.2/50
μs waveform,
VIOSM
Maximum surge isolation voltage
6250
VTEST = 1.6 x VIOSM = 10000 VPK (qualification)
(1)
VIO = 500 V, TA = 25°C
> 1012
RIO
Isolation resistance, input to output(2)
VIO = 500 V, 100°C ≤ TA ≤ max
> 1011
VIO = 500 V at TS
> 109
CIO
Barrier capacitance, input to output(2)
VIO = 0.4 x sin (2πft), f = 1 MHz
1
pF
Pollution degree
2
UL 1577
VTEST = VISO, t = 60 sec (qualification),
VISO
Withstanding Isolation voltage
VTEST = 1.2 × VISO = 6840 VRMS, t = 1 sec (100%
5700
VRMS
production)
(1)
Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(2)
All pins on each side of the barrier tied together creating a two-terminal device
Copyright © 2015, Texas Instruments Incorporated
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