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ECH8668 Datasheet(PDF) 2 Page - ON Semiconductor

Part # ECH8668
Description  Power MOSFET Complementary Dual
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ECH8668 Datasheet(HTML) 2 Page - ON Semiconductor

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Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.5
1.3
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=4A
4.2
7
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=4A, VGS=4.5V
13
17
mΩ
RDS(on)2
ID=2A, VGS=2.5V
18
26
mΩ
RDS(on)3
ID=0.5A, VGS=1.8V
30
48
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
1060
pF
Output Capacitance
Coss
180
pF
Reverse Transfer Capacitance
Crss
135
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
17.5
ns
Rise Time
tr
120
ns
Turn-OFF Delay Time
td(off)
68
ns
Fall Time
tf
80
ns
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=7.5A
10.8
nC
Gate-to-Source Charge
Qgs
2.1
nC
Gate-to-Drain “Miller” Charge
Qgd
2.9
nC
Diode Forward Voltage
VSD
IS=7.5A, VGS=0V
0.74
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--20V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--0.4
--1.3
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--3A
4.9
8.3
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--3A, VGS=--4.5V
29
38
mΩ
RDS(on)2
ID=--1.5A, VGS=--2.5V
41
58
mΩ
RDS(on)3
ID=--0.5A, VGS=--1.8V
64
98
mΩ
Input Capacitance
Ciss
VDS=--10V, f=1MHz
960
pF
Output Capacitance
Coss
180
pF
Reverse Transfer Capacitance
Crss
140
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
55
ns
Turn-OFF Delay Time
td(off)
92
ns
Fall Time
tf
68
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4.5V, ID=--5A
11
nC
Gate-to-Source Charge
Qgs
2.0
nC
Gate-to-Drain “Miller” Charge
Qgd
2.8
nC
Diode Forward Voltage
VSD
IS=--5A, VGS=0V
--0.82
--1.2
V
Switching Time Test Circuit
[N-channel]
[P-channel]
Ordering Information
Device
Package
Shipping
memo
ECH8668-TL-H
ECH8
3,000pcs./reel
Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=4A
RL=2.5Ω
VDD=10V
VOUT
VIN
4V
0V
VIN
ECH8668
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --3A
RL=3.33Ω
VDD= --10V
VOUT
VIN
0V
--4V
VIN
ECH8668
ECH8668
No. A1510-2/8



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