If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Storage Temperature (T

−65˚C to +150˚C

Maximum Junction Temperature (T

Ceramic

+175˚C

V

Ground Pin

−7.0V to +0.5V

V

Ground Pin

−0.5V to +6.0V

ECL Input Voltage (DC)

V

ECL Output Current

(DC Output HIGH)

−50 mA

TTL Input Voltage (Note 7)

−0.5V to +6.0V

TTL Input Current (Note 7)

−30 mA to +5.0 mA

Voltage Applied to Output in HIGH State

TRI-STATE Output

−0.5V to +5.5V

Current Applied to TTL

Output in LOW State (Max)

Twice the Rated I

ESD (Note 6)

≥2000V

Recommended Operating

Conditions

Case Temperature (T

Military

−55˚C to +125˚C

ECL Supply Voltage (V

−5.7V to −4.2V

TTL Supply Voltage (V

+4.5V to +5.5V

Note 5: Absolute maximum ratings are those values beyond which the de-

vice may be damaged or have its useful life impaired. Functional operation

under these conditions is not implied.

Note 6: ESD testing conforms to MIL-STD-883, Method 3015.

Note 7: Either voltage limit or current limit is sufficient to protect inputs.

Military Version

TTL-to-ECL DC Electrical Characteristics

V

Symbol

Parameter

Min

Max

Units

T

C

Conditions

Notes

V

OH

Output HIGH Voltage

−1025

−870

mV

0˚C to

Loading with

50

Ω to −2.0V

(Notes 8, 9,

10)

+125˚C

−1085

−870

mV

−55˚C

V

V

OL

Output LOW Voltage

−1830

−1620

mV

0˚C to

or V

+125˚C

−1830

−1555

mV

−55˚C

Cutoff Voltage

−1950

mV

0˚C to

+125˚C

OE or DIR Low

−1850

mV

−55˚C

V

OHC

Output HIGH Voltage

−1035

mV

0˚C to

(Notes 8, 9,

10)

+125˚C

−1085

mV

−55˚C

V

Loading with

V

OLC

Output LOW Voltage

−1610

mV

0˚C to

or V

50

Ω0 to −2.0V

+125˚C

−1555

mV

−55˚C

V

IH

Input HIGH Voltage

2.0

V

−55˚C to

Over V

(Notes 8, 9,

10, 11)

+125˚C

V

IL

Input LOW Voltage

0.8

V

−55˚C to

Over V

(Notes 8, 9,

10, 11)

+125˚C

I

IH

Input HIGH Current

70

µA

−55˚C to

V

(Notes 8, 9,

10)

125˚C

Breakdown Test

1.0

mA

−55˚C to

V

+125˚C

I

IL

Input LOW Current

−1.0

mA

−55˚C to

V

(Notes 8, 9,

10)

+125˚C

V

FCD

Input Clamp

−1.2

V

−55˚C to

I

(Notes 8, 9,

10)

Diode Voltage

+125˚ C

I

EE

V

LE Low, OE and DIR High

(Notes 8, 9,

10)

−55˚C to

Inputs Open

−165

−73

mA

+125˚C

V

−175

−73

V

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