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100329F Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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100329F Datasheet(HTML) 5 Page - National Semiconductor (TI) |
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5 / 11 page ![]() Military Version ECL-to-TTL DC Electrical Characteristics V EE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C, CL = 50 pF, VTTL = +4.5V to + 5.5V Symbol Parameter Min Max Units T C Conditions Notes V OH Output HIGH Voltage 2.5 mV 0˚C to +125˚C I OH = −1 mA, VTTL = 4.50V (Notes 7, 8, 9) 2.4 −55˚C V OL Output LOW Voltage 0.5 mV −55˚C I OL = 24 mA, VTTL = 4.50V +125˚C V IH Input HIGH Voltage −1165 −870 mV −55˚C Guaranteed HIGH Signal (Notes 7, 8, 9, 10) +125˚C for All Inputs V IL Input LOW Voltage −1830 −1475 mV −55˚C to Guaranteed LOW Signal (Notes 7, 8, 9, 10) +125˚C for All Inputs I IH Input HIGH Current 350 µA 0˚C to V EE = −5.7V (Notes 7, 8, 9) 500 +125˚C V IN = VIH (Max) I IL Input LOW Current 0.50 µA −55˚C to V EE = −4.2V (Notes 7, 8, 9) +125˚C V IN = VIL (Min) I OZHT TRI-STATE Current 70 µA −55˚C to V OUT = +2.7V (Notes 7, 8, 9) Output High +125˚C I OZLT TRI-STATE Current −1.0 mA −55˚C to V OUT = +0.5V (Notes 7, 8, 9) Output Low +125˚C I OS Output Short-Circuit −60 −150 mA −55˚C to V OUT = 0.0V, VTTL = +5.5V (Notes 7, 8, 9) CURRENT +125˚C I TTL V TTL Supply Current 70 mA −55˚C to TTL Outputs Low (Notes 7, 8, 9) 47 mA +125˚C TTL Output High 70 mA TTL Output in TRI-STATE Note 7: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures. Note 8: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups, 1, 2 3, 7, and 8. Note 9: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8. Note 10: Guaranteed by applying specified input condition and testing VOH/VOL. Military Version TTL-to-ECL AC Electrical Characteristics V EE = −4.2V to −5.7V, VTTL = +4.5V to +5.5V, VCC = VCCA = GND Symbol Parameter T C = −55˚C T C = 25˚C T C = +125˚C Units Conditions Notes Min Max Min Max Min Max t PLH CP to E n 1.3 3.8 1.6 3.7 1.9 4.3 ns Figures 1, 2 (Notes 11, 12, 13) t PHL ns t PZH OE to E n 1.0 4.3 1.5 4.4 1.7 9.0 ns Figures 1, 2 (Notes 11, 12, 13) (Cutoff to HIGH) t PHZ OE to E n 1.5 5.0 1.6 4.5 1.6 5.0 ns Figures 1, 2 (HIGH to Cutoff) t PHZ DIR to E n 1.6 4.7 1.6 4.3 1.7 4.7 ns Figures 1, 2 (HIGH to Cutoff) t set T n to CP 2.5 2.0 2.5 ns Figures 1, 2 (Note 14) t hold T n to CP 2.5 2.0 2.5 ns Figures 1, 2 t pw(H) Pulse Width CP 2.5 2.0 2.5 ns Figures 1, 2 (Note 14) t TLH Transition Time 0.4 2.3 0.5 2.1 0.4 2.4 ns Figures 1, 2 (Note 14) t THL 20% to 80%,80% to 20% f MAX CP 250 250 250 MHz www.national.com 5 |
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