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AS1117 Datasheet(PDF) 3 Page - Alpha Industries |
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AS1117 Datasheet(HTML) 3 Page - Alpha Industries |
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3 / 11 page ![]() Alpha Semiconductor Inc. 1031 Serpentine Lane. Pleasanton, CA 94568 Tel: (925) 417-1391 Fax: (925) 417-1390 Rev. 9/14/99 AS1117 APPLICATION NOTES EXTERNAL CAPACITOR To ensure the stability of the AS1117 an output capacitor of at least 10 µF (tantalum)or 50µF (aluminum) is required. The value may change based on the application requirements on the output load or temperature range. The capacitor equivalent series resistance (ESR) will effect the AS1117 stability. The value of ESR can vary from the type of capacitor used in the applications. The recommended value for ESR is 0.5 Ω. The output capacitance could increase in size to above the minimum value. The larger value of output capacitance as high as 100 µF can improve the load transient response. SOLDERING METHODS The AS1117 SOT-223 package is designed to be compatible with infrared reflow or vapor-phase reflow soldering techniques. During soldering the non-active or mildly active fluxes may be used. The AS1117 die is attached to the heatsink lead which exits opposite the input, output, and ground pins. Hand soldering and wave soldering should be avoided since these methods can cause damage to the device with excessive thermal gradients on the package. The SOT-223 recommended soldering method are as follows: vapor phase reflow and infrared reflow with the component preheated to within 65 °C of the soldering temperature range. THERMAL CHARACTERISTICS The thermal resistance of AS1117 is 15 °C/W from junction to tab and 31 °C/W from tab to ambient for a total of 46 °C/W from junction to ambient. The AS1117 features the internal thermal limiting to protect the device during overload conditions. Special care needs to be taken during continuos load conditions the maximum junction temperature does not exceed 125 °C. Taking the FR-4 printed circuit board and 1/16 thick with 1 ounce copper foil as an experiment (fig.1 & fig.2), the PCB material is effective at transmitting heat with the tab attached to the pad area and a ground plane layer on the backside of the substrate. Refer to table 1 for the results of the experiment. The thermal interaction from other components in the application can effect the thermal resistance of the AS1117. The actual thermal resistance can be determined with experimentation. AS1117 power dissipation is calculated as follows: PD = (VIN - VOUT)(IOUT) Maximum Junction Temperature range: TJ = Tambient (max) + PD* thermal resistance (Junction-to- ambient) Maximum Junction temperature must not exceed the 125 °C. 10uF + Ω.. 27K AS1117-2.85 + 10V 10uF 2.85V 50 X 50 mm 35 X 17 mm 16 X 10 mm PO = (10V - 2.85)(105mA) = (7.15)(105mA) = 750mW Fig. 1. Circuit Layout, Thermal Experiments. Fig. 2. Substrate Layout for SOT-223 |
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