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DMP2035UFCL Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMP2035UFCL
Description  20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2035UFCL Datasheet(HTML) 2 Page - Diodes Incorporated

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DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
2 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMP2035UFCL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
ID
-6.6
-5.3
A
Pulsed Drain Current (380
μs Pulse, 1% Duty Cycle)(Note 7)
IDM
-40
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
-1.7
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
0.74
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
RθJA
169
°C/W
Power Dissipation (Note 6)
PD
1.6
W
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
RθJA
79
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-20
-
-
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-
-
-1.0
μA
VDS = -16V, VGS = 0V
Zero Gate Voltage Drain Current TJ = +150°C (Note 8)
IDSS
-
-
-100
μA
VDS = -16V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±10
μA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
-0.4
-
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
-
19
24
31
24
31
45
m
Ω
VGS = -4.5V, ID = -8.0A
VGS = -2.5V, ID = -7.0A
VGS = -1.8V, ID = -6.0A
Diode Forward Voltage
VSD
-0.5
-0.7
-1.2
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
-
1,610
2,200
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
-
157
240
pF
Reverse Transfer Capacitance
Crss
-
145
220
pF
Gate Resistance
Rg
-
9.45
14.5
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -8V)
Qg
-
29
44
nC
VDS = -10V,
ID = -4A
Total Gate Charge (VGS = -4.5V)
Qg
-
15.4
21
nC
Gate-Source Charge
Qgs
-
2.5
3.8
nC
Gate-Drain Charge
Qgd
-
3.3
5
nC
Turn-On Delay Time
tD(ON)
-
16.8
34
ns
VDS = -20V, VGS = -10V,
RG = 6.0Ω, ID = -6A
Turn-On Rise Time
tR
-
12.4
25
ns
Turn-Off Delay Time
tD(OFF)
-
94.1
188
ns
Turn-Off Fall Time
tF
-
42.4
85
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



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