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DMP2035UFCL Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP2035UFCL Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() DMP2035UFCL Document number: DS37917 Rev. 1 - 2 2 of 7 www.diodes.com September 2015 © Diodes Incorporated DMP2035UFCL Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 6) Steady State TA = +25°C TA = +70°C ID -6.6 -5.3 A Pulsed Drain Current (380 μs Pulse, 1% Duty Cycle)(Note 7) IDM -40 A Maximum Continuous Body Diode Forward Current (Note 6) IS -1.7 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 0.74 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA 169 °C/W Power Dissipation (Note 6) PD 1.6 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) RθJA 79 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - -1.0 μA VDS = -16V, VGS = 0V Zero Gate Voltage Drain Current TJ = +150°C (Note 8) IDSS - - -100 μA VDS = -16V, VGS = 0V Gate-Source Leakage IGSS - - ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -0.4 - -1.0 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) - 19 24 31 24 31 45 m Ω VGS = -4.5V, ID = -8.0A VGS = -2.5V, ID = -7.0A VGS = -1.8V, ID = -6.0A Diode Forward Voltage VSD -0.5 -0.7 -1.2 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss - 1,610 2,200 pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss - 157 240 pF Reverse Transfer Capacitance Crss - 145 220 pF Gate Resistance Rg - 9.45 14.5 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -8V) Qg - 29 44 nC VDS = -10V, ID = -4A Total Gate Charge (VGS = -4.5V) Qg - 15.4 21 nC Gate-Source Charge Qgs - 2.5 3.8 nC Gate-Drain Charge Qgd - 3.3 5 nC Turn-On Delay Time tD(ON) - 16.8 34 ns VDS = -20V, VGS = -10V, RG = 6.0Ω, ID = -6A Turn-On Rise Time tR - 12.4 25 ns Turn-Off Delay Time tD(OFF) - 94.1 188 ns Turn-Off Fall Time tF - 42.4 85 ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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