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DMP2035UFCL Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMP2035UFCL
Description  20V P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP2035UFCL Datasheet(HTML) 4 Page - Diodes Incorporated

  DMP2035UFCL Datasheet HTML 1Page - Diodes Incorporated DMP2035UFCL Datasheet HTML 2Page - Diodes Incorporated DMP2035UFCL Datasheet HTML 3Page - Diodes Incorporated DMP2035UFCL Datasheet HTML 4Page - Diodes Incorporated DMP2035UFCL Datasheet HTML 5Page - Diodes Incorporated DMP2035UFCL Datasheet HTML 6Page - Diodes Incorporated DMP2035UFCL Datasheet HTML 7Page - Diodes Incorporated  
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DMP2035UFCL
Document number: DS37917 Rev. 1 - 2
4 of 7
www.diodes.com
September 2015
© Diodes Incorporated
DMP2035UFCL
0.01
0.015
0.02
0.025
0.03
0.035
0.04
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = -4.5V, ID = 8.0A
V
GS = -2.5V, ID = 7.0A
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125
oC
T
J = 85
oC
T
J = 25
oC
T
J = -55
oC
V
GS = 0V
T
J = 150
oC
10
100
1000
10000
0
5
10
15
20
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
0
5
10
15
20
25
30
Q
g (nC)
Figure 12. Gate Charge
V
DS = -10V, ID = -4A
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
-25
0
25
50
75
100
125
150
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = -250μA
I
D = -1mA
0.1
1
10
100
1000
10000
100000
0
5
10
15
20
V
DS, Drain-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
25
℃
85
℃
150
℃
125
℃



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