BFP450 datasheet(1/7 Pages) INFINEON

Part #	BFP450

Description	NPN Silicon RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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BFP450

SIEGET25

Aug-20-2001

1

NPN Silicon RF Transistor

For medium power amplifiers

Compression point P-1dB = +19 dBm at 1.8 GHz

maximum available gain Gma = 15.5 dB at 1.8 GHz

Noise figure F = 1.25 dB at 1.8 GHz

Transition frequency fT = 24 GHz

Gold metallization for high reliability

SIEGET 25 GHz fT - Line

VPS05605

4

2

1

3

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP450

ANs

1 = B

2 = E

3 = C

4 = E

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

4.5

V

Collector-base voltage

VCBO

15

Emitter-base voltage

VEBO

1.5

Collector current

IC

100

mA

Base current

IB

10

Total power dissipation

TS 96 °C 1)

Ptot

450

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

120

K/W

1TS is measured on the emitter lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

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