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BSP350 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSP350 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 6 page ![]() BSP 350 Semiconductor Group Page 3 08.04.97 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 13.5V unless otherwise specified min typ max Protection Functions Current limit (pin 2 to 3) 5) Tj = 25°C Tj = -40...+150° IL(SC) 0.2 0.1 0.5 -- 1 1.2 A Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆T jt -- 20 -- K Overvoltage protection Tj =-40...+150°C Vbbin(AZ) 50 56 -- V Output clamp (ind. load switch off) at VOUT = Vbb - VON(CL) VON(CL) -- 56 -- V Inductive load switch-off energy dissipation 6) EAS -- -- 5mJ Reverse battery resistor (pin 1 to 2) RIN -- 1 -- k Ω Reverse Diode Continious reverse drain current Tj = 25°C IS -- -- 0.2 A Pulsed reverse drain current Tj = 25°C ISM -- -- 0.8 A Diode forward on voltage IF = 0.2 A, IIN = ≤ 0.05 mA VSD -- 0.9 1.2 V 5 ) load current limits onset at IL * Ron approx. 1V short circuit protection: combination of current limit and thermal overload switch off 6 ) while demagnetizing load inductance, dissipated energy is EAS= ∫(VON(CL) * iL(t) dt, approx. EAS= 1/2 * L * I 2 L * ( VON(CL) VON(CL)-Vbb ) |
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