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BTS149 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BTS149 Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 10 page ![]() 2004-02-02 Page 4 BTS 149 Electrical Characteristics Parameter Symbol Values Unit at Tj=25°C, unless otherwise specified min. typ. max. Characteristics Initial peak short circuit current limit VIN = 10 V, VDS = 12 V ID(SCp) - 130 - A Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 µs, Tj = -40...+150 °C ID(lim) 30 40 60 Dynamic Characteristics Turn-on time VIN to 90% ID: RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V ton - 40 100 µs Turn-off time VIN to 10% ID: RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V toff - 70 170 Slew rate on 70 to 50% Vbb: RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton - 1 3 V/µs Slew rate off 50 to 70% Vbb: RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V dVDS/dtoff - 1 3 Protection Functions Thermal overload trip temperature Tjt 150 165 - °C Unclamped single pulse inductive energy ID = 19 A, Tj = 25 °C, Vbb = 32 V ID = 19 A, Tj = 150 °C, Vbb = 32 V EAS 6000 1800 - - - - mJ Inverse Diode Inverse diode forward voltage IF = 5*19A, tm = 300 µS, VIN = 0 V VSD - 1.1 - V 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. |
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