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CFY66 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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CFY66 Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 7 page ![]() CFY66 Semiconductor Group 3 of 8 Draft D, September 99 Electrical Characteristics (at TA=25°C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V IDss 10 30 60 mA Gate threshold voltage VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V Drain current at pinch-off VDS = 1.5 V, VGS = - 3 V IDp -< 50 - µA Gate leakage current at pinch-off VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 µA Transconductance VDS = 2 V, ID = 10 mA gm10 40 55 - mS Gate leakage current at operation VDS = 2 V, ID = 10 mA -IG10 -< 0.5 2 µA Thermal resistance junction to soldering point Rth JS - 450 - K/W |
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