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STL130N8F7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STL130N8F7 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() DocID023889 Rev 3 3/15 STL130N8F7 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ± 20 ID (1) 1. This value is rated according to Rthj-c. Drain current (continuous) at TC = 25 °C 130 A ID (1) Drain current (continuous) at TC = 100 °C 93 ID (2) 2. This value is rated according to Rthj-pcb. Drain current (continuous) at Tpcb = 25 °C 26 ID (2) Drain current (continuous) at Tpcb = 100 °C 19 IDM (1)(3) 3. Pulse width is limited by safe operating area. Drain current (pulsed) 560 IDM (2)(3) Drain current (pulsed) 104 PTOT (1) Total dissipation at TC = 25 °C 135 W PTOT (2) Total dissipation at Tpcb = 25 °C 4.8 W EAS (4) 4. Starting TJ=25°C, ID=18.5 A, VDD=50 V Single pulse avalanche energy 515 mJ TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec. Thermal resistance junction-pcb 31.3 °C/W Rthj-case Thermal resistance junction-case 1.1 °C/W |
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