STL160NS3LLH7 datasheet(3/15 Pages) STMICROELECTRONICS

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DocID024783 Rev 4

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STL160NS3LLH7

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

± 20

(1)

1. This value is rated according to Rthj-c

Drain current (continuous) at TC = 25 °C

160

(1)

Drain current (continuous) at TC = 100 °C

115

IDM

(1)(2)

2. Pulse width limited by safe operating area

Drain current (pulsed)

640

(3)

3. This value is rated according to Rthj-pcb

Drain current (continuous) at Tpcb = 25 °C

(3)

Drain current (continuous) at Tpcb = 100 °C

IDM

(2)(3)

Drain current (pulsed)

144

PTOT

(1)

Total dissipation at TC = 25 °C

PTOT

(3)

Total dissipation at Tpcb = 25 °C

EAS

(4)

4. L=1 mH, ID=20 A, VDD=25 V

Single pulse avalanche energy

200

Operating junction temperature

-55 to 150

°C

Tstg

Storage temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-pcb

(1)

1. When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 sec

Thermal resistance junction-pcb max

31.3

°C/W

Rthj-case

Thermal resistance junction-case max

1.5

°C/W

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