STL160NS3LLH7 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL160NS3LLH7

4/15

DocID024783 Rev 4

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 24 V

500

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 1 mA

1.2

2.3

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 18 A

0.0016 0.0021

Ω

VGS = 4.5 V, ID = 18 A

0.0025 0.0031

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

3245

Coss

Output capacitance

970

Crss

Reverse transfer

capacitance

-52

Total gate charge

VDD = 15 V, ID = 36 A,

VGS = 4.5 V

(see Figure 13)

-20

Qgs

Gate-source charge

9.3

Qgd

Gate-drain charge

5.7

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 15 V, ID = 18 A,

RG = 4.7 Ω, VGS = 4.5 V

-12.4

Rise time

21.3

td(off)

Turn-off delay time

50.7

Fall time

19.5

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