GaN Wideband Transistor 48 V, 45 W

DC - 2.5 GHz

Rev. V1

NPT2021

1

11

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Ordering Information

Part Number

Package

NPT2021

Bulk Quantity

NPT2021-SMBPPR

Sample Board

Features

 GaN on Si HEMT D-Mode Transistor

 Suitable for linear and saturated applications

 Tunable from DC - 2.5 GHz

 48 V Operation

 16.5 dB Gain at 2.5 GHz

 55 % Drain Efficiency at 2.5 GHz

 100 % RF Tested

 TO-272 Package

 RoHS* Compliant and 260°C reflow compatible

Description

The NPT2021 GaN HEMT is a wideband transistor

optimized for DC - 2.5 GHz operation. This device

supports CW, pulsed, and linear operation with

output power levels to 45 W in an industry standard

plastic package with bolt down flange.

The NPT2021 is ideally suited for defense

communications,

land

mobile

radio,

avionics,

wireless infrastructure, ISM applications and VHF/

UHF/L/S-band radar.

Built using the SIGANTIC® process - a proprietary

GaN-on-Silicon technology.

Pin Configuration

Functional Schematic

Pin No.

Pin Name

Function

1

RF Input / Gate

2

RF Output / Drain

3

Ground / Source

1. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also

provide a low thermal resistance heat path.

1

3

2