NPT2021 datasheet(3/9 Pages) MA-COM

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GaN Wideband Transistor 48 V, 45 W

DC - 2.5 GHz

Rev. V1

NPT2021

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2. Exceeding any one or combination of these limits may cause permanent damage to this device.

3. MACOM does not recommend sustained operation near these survivability limits.

4. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 10

6 hours.

Parameter

Absolute Maximum

Drain Source Voltage, VDS

160 V

Gate Source Voltage, VGS

-10 to 3 V

Gate Current, IG

24 mA

Junction Temperature, TJ

+200°C

Operating Temperature

-40°C to +85°C

Storage Temperature

-65°C to +150°C

5. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple

embedded in heat-sink.

Parameter

Test Conditions

Symbol

Typical

Units

Thermal Resistance

VDS = 48 V, TJ = 200°C

RJC

1.60

°C/W

Thermal Characteristics5

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Nitride Circuits are sensitive to electrostatic

discharge (ESD) and can be damaged by static

electricity. Proper ESD control techniques should

be used when handling these HBM Class 1B

devices.

Absolute Maximum Ratings2,3,4

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