MICROWAVE CORPORATION

8 - 68

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

HMC313

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6.0 GHz

v02.0703

General Description

Features

The HMC313 is a GaAs InGaP Heterojunction

Bipolar Transistor (HBT) MMIC amplifier that

operates from a single Vcc supply.

The surface

mount

SOT26

amplifier

can

be

used

as

a

broadband gain stage or used with external

matching for optimized narrow band applications.

With Vcc biased at +5V, the HMC313 offers 17 dB

of gain and +15 dBm of saturated power while only

requiring 50 mA of current. The “HMC313 Biasing

and Impedance Matching Techniques” application

note available within the “Application Notes” section

offers recommendations for narrow band operation.

P1dB Output Power: +14 dBm

Output IP3: +27 dBm

Gain: 17 dB

Single Supply: +5V

High Reliability GaAs HBT Process

Ultra Small Package: SOT26

Ideal as a Driver & Amplifier for:

• 2.2 - 2.7 GHz MMDS

• 3.5 GHz Wireless Local Loop

• 5.0 - 6.0 GHz UNII & HiperLAN

Parameter

Vcc = +5V

Units

Min.

Typ.

Max.

Frequency Range

DC - 6

GHz

Gain

14

17

20

dB

Gain Variation Over Temperature

0.02

0.03

dB/°C

Input Return Loss

7dB

Output Return Loss

6dB

Reverse Isolation

30

dB

Output Power for 1 dB Compression (P1dB) @ 1.0 GHz

11

14

dBm

Saturated Output Power (Psat) @ 1.0 GHz

15

dBm

Output Third Order Intercept (IP3) @ 1.0 GHz

24

27

dBm

Noise Figure

6.5

dB

Supply Current (Icc)

50

mA

Functional Diagram

Typical Applications