MICROWAVE CORPORATION

8 - 71

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

HMC313

GaAs InGaP HBT MMIC BROADBAND

AMPLIFIER GAIN BLOCK, DC - 6.0 GHz

v02.0703

Absolute Maximum Ratings

Collector Bias Voltage (Vcc)

+5.5 Vdc

RF Input Power (RFin)(Vcc = +5.0 Vdc)

+20 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 3.99 mW/°C above 85 °C)

0.259 W

Thermal Resistance

(junction to lead)

251 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.

Absolute Maximum Ratings