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T0340VB45G Datasheet(PDF) 3 Page - IXYS Corporation

Part # T0340VB45G
Description  Insulated Gate Bi-Polar Transistor
PDF  7 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

T0340VB45G Datasheet(HTML) 3 Page - IXYS Corporation

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Insulated Gate Bi-polar Transistor Type T0340VB45G
Data Sheet T0340VB45G Issue 2
Page 3 of 7
August, 2012
Curves
Figure 1 – Typical collector-emitter saturation voltage
characteristics
Figure 2 – Typical output characteristic
Figure 3 – Typical output characteristic
Figure 4 – Typical turn-on delay time vs gate
resistance
1
10
100
1000
01
2
34567
Collector to emitter saturation voltage - VCE(sat) (V)
125°C
25°C
T0340VB45G
Issue 2
VGE=+15V
0
200
400
600
800
01
23
45
Collector to emitter saturation voltage - VCE(sat) (V)
T0340VB45G
Issue 2
Tj =25°C
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
0
200
400
600
800
012
3
4
567
C ollector to em itter saturation voltage - VCE(sat) (V)
VGE = 20V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
T0340VB45G
Issue 2
Tj=125°C
0
5
10
15
20
10
20
30
40
50
60
70
80
90
G ate resistance - RG(on) (Ω )
VCE=2800V
VGE=±15V
CGE=47nF
Tj=125°C
T0340VB45G
Issue 2
200A
340A



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