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T0340VB45G Datasheet(PDF) 4 Page - IXYS Corporation |
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T0340VB45G Datasheet(HTML) 4 Page - IXYS Corporation |
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4 / 7 page ![]() Insulated Gate Bi-polar Transistor Type T0340VB45G Data Sheet T0340VB45G Issue 2 Page 4 of 7 August, 2012 Figure 5 – Typical turn-off delay time vs. gate resistance Figure 6 – Typical turn-on energy vs. collector current Figure 7 – Typical turn-on energy vs. di/dt Figure 8 – Typical turn-off energy vs. collector current 0 2 4 6 8 10 12 10 20 30 40 50 60 70 80 90 Gate resistance - RG(off) (Ω) VCE=2800V VGE=±15V CGE=47nF Tj=125°C T0340VB45G Issue 2 340A 200A 0 1 2 3 4 50 100 150 200 250 300 350 400 Collector current - IC (A) VCE=2000V VCE=2800V RG(on)=18Ω CGE=47nF VGE=±15V Tj=125°C VCE=1000V T0340VB45G Issue 2 0 2 4 6 8 10 0 100 200 300 400 500 600 Commutation rate - di/dt (A/µs) IC=200A VCE=2800V VGE=±15V Tj=125°C IC=340A T0340VB45G Issue 2 0.0 0.5 1.0 1.5 2.0 50 100 150 200 250 300 350 400 Collector current - IC (A) VCE=2000V VCE=2800V RG(off)=20Ω CGE=47nF VGE=±15V Tj=125°C VCE=1000V T0340VB45G Issue 2 |
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