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ADuM3154ARSZ Datasheet(PDF) 20 Page - Analog Devices

Part # ADuM3154ARSZ
Description  3.75 kV, 7-Channel, SPIsolator Multiple Slave, Digital Isolator for SPI
PDF  22 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADuM3154ARSZ Datasheet(HTML) 20 Page - Analog Devices

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ADuM3154
Data Sheet
For example, at a magnetic field frequency of 1 MHz, the
maximum allowable magnetic field of 0.5 kgauss induces a
voltage of 0.25 V at the receiving coil. This is about 50% of the
sensing threshold and does not cause a faulty output transition.
If such an event occurs, with the worst-case polarity, during a
transmitted pulse, it reduces the received pulse from >1.0 V to
0.75 V, which is still well above the 0.5 V sensing threshold of
the decoder.
The preceding magnetic flux density values correspond to
specific current magnitudes at given distances away from the
ADuM3154 transformers. Figure 16 expresses these allowable
current magnitudes as a function of frequency for selected
distances. The ADuM3154 is insensitive to external fields. Only
extremely large, high frequency currents very close to the
component are potentially a concern. For the 1 MHz example
noted, a user would have to place a 1.2 kA current 5 mm away
from the ADuM3154 to affect component operation.
MAGNETIC FIELD FREQUENCY (Hz)
1000
100
10
1
0.1
0.01
1k
10k
100M
100k
1M
10M
DISTANCE = 5mm
DISTANCE = 1m
DISTANCE = 100mm
Figure 16. Maximum Allowable Current for
Various Current to ADuM3154 Spacings
At combinations of a strong magnetic field and high frequency,
any loops formed by the PCB traces may induce sufficiently
large error voltages to trigger the thresholds of succeeding
circuitry. Take care to avoid PCB structures that form loops.
POWER CONSUMPTION
The supply current at a given channel of the ADuM3154
isolator is a function of the supply voltage, the data rate of the
channel, the output load of the channel, and whether it is a high
or low speed channel.
The low speed channels draw a constant quiescent current
caused by the internal ping-pong datapath. The operating
frequency is low enough that the capacitive losses caused by
the recommended capacitive load are negligible compared to
the quiescent current. The explicit calculation for the data rate
is eliminated for simplicity, and the quiescent current for each
side of the isolator due to the low speed channels can be found
in Table 3, Table 5, Table 7, and Table 9 for the particular operating
voltages.
These quiescent currents add to the high speed current as is
shown in the following equations for the total current for each
side of the isolator. Dynamic currents are taken from Table 3
and Table 5 for the respective voltages.
For Side 1, the supply current is given by
(
)
(
)
(
)
(
)
DD1(Q)
DD1
L(MI)
DDO(D)
MI
MO
MCLK
DDI(D)
DD1
I
V
C
I
f
f
f
f
I
I
+
×
×
×
+
×
+
+
+
×
=
−3
MSS
10
5
.
0
For Side 2, the supply current is given by
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(
)
(Q)
DD
DD
L(SSx)
DDO(D)
SSx
DD
L(SI)
DDO(D)
SI
DD
L(SCLK)
DDO(D)
SCLK
SO
DDI(D)
DD
I
V
C
I
f
V
C
I
f
V
C
I
f
f
I
I
2
2
3
2
3
2
3
2
10
5
.
0
10
5
.
0
10
5
.
0
+
×
×
×
+
×
+
×
×
×
+
×
+
×
×
×
+
×
+
×
=
−
−
−
where:
IDDI(D), IDDO(D) are the input and output dynamic supply currents
per channel (mA/Mbps).
fX is the logic signal data rate for the specified channel (Mbps).
CL(x) is the load capacitance of the specified output (pF).
VDDx is the supply voltage of the side being evaluated (V).
IDD1(Q), IDD2(Q) are the specified Side 1 and Side 2 quiescent
supply currents (mA).
Figure 4 and Figure 7 show the supply current per channel as a
function of data rate for an input and unloaded output. Figure 5
and Figure 8 show the total IDD1 and IDD2 supply currents as a
function of data rate for ADuM3154 channel configurations with
all high speed channels running at the same speed and the low
speed channels at idle.
INSULATION LIFETIME
All insulation structures eventually break down when subjected
to voltage stress over a sufficiently long period. The rate of
insulation degradation is dependent on the characteristics of the
voltage waveform applied across the insulation, as well as the
materials and material interfaces.
Two types of insulation degradation are of primary interest:
breakdown along surfaces exposed to the air and insulation
wear out. Surface breakdown is the phenomenon of surface
tracking and the primary determinant of surface creepage
requirements in system level standards. Insulation wear out is
the phenomenon where charge injection or displacement
currents inside the insulation material cause long-term
insulation degradation.
Rev. A | Page 20 of 22



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