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ADuM3154ARSZ Datasheet(PDF) 20 Page - Analog Devices |
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ADuM3154ARSZ Datasheet(HTML) 20 Page - Analog Devices |
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20 / 22 page ![]() ADuM3154 Data Sheet For example, at a magnetic field frequency of 1 MHz, the maximum allowable magnetic field of 0.5 kgauss induces a voltage of 0.25 V at the receiving coil. This is about 50% of the sensing threshold and does not cause a faulty output transition. If such an event occurs, with the worst-case polarity, during a transmitted pulse, it reduces the received pulse from >1.0 V to 0.75 V, which is still well above the 0.5 V sensing threshold of the decoder. The preceding magnetic flux density values correspond to specific current magnitudes at given distances away from the ADuM3154 transformers. Figure 16 expresses these allowable current magnitudes as a function of frequency for selected distances. The ADuM3154 is insensitive to external fields. Only extremely large, high frequency currents very close to the component are potentially a concern. For the 1 MHz example noted, a user would have to place a 1.2 kA current 5 mm away from the ADuM3154 to affect component operation. MAGNETIC FIELD FREQUENCY (Hz) 1000 100 10 1 0.1 0.01 1k 10k 100M 100k 1M 10M DISTANCE = 5mm DISTANCE = 1m DISTANCE = 100mm Figure 16. Maximum Allowable Current for Various Current to ADuM3154 Spacings At combinations of a strong magnetic field and high frequency, any loops formed by the PCB traces may induce sufficiently large error voltages to trigger the thresholds of succeeding circuitry. Take care to avoid PCB structures that form loops. POWER CONSUMPTION The supply current at a given channel of the ADuM3154 isolator is a function of the supply voltage, the data rate of the channel, the output load of the channel, and whether it is a high or low speed channel. The low speed channels draw a constant quiescent current caused by the internal ping-pong datapath. The operating frequency is low enough that the capacitive losses caused by the recommended capacitive load are negligible compared to the quiescent current. The explicit calculation for the data rate is eliminated for simplicity, and the quiescent current for each side of the isolator due to the low speed channels can be found in Table 3, Table 5, Table 7, and Table 9 for the particular operating voltages. These quiescent currents add to the high speed current as is shown in the following equations for the total current for each side of the isolator. Dynamic currents are taken from Table 3 and Table 5 for the respective voltages. For Side 1, the supply current is given by ( ) ( ) ( ) ( ) DD1(Q) DD1 L(MI) DDO(D) MI MO MCLK DDI(D) DD1 I V C I f f f f I I + × × × + × + + + × = −3 MSS 10 5 . 0 For Side 2, the supply current is given by ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) (Q) DD DD L(SSx) DDO(D) SSx DD L(SI) DDO(D) SI DD L(SCLK) DDO(D) SCLK SO DDI(D) DD I V C I f V C I f V C I f f I I 2 2 3 2 3 2 3 2 10 5 . 0 10 5 . 0 10 5 . 0 + × × × + × + × × × + × + × × × + × + × = − − − where: IDDI(D), IDDO(D) are the input and output dynamic supply currents per channel (mA/Mbps). fX is the logic signal data rate for the specified channel (Mbps). CL(x) is the load capacitance of the specified output (pF). VDDx is the supply voltage of the side being evaluated (V). IDD1(Q), IDD2(Q) are the specified Side 1 and Side 2 quiescent supply currents (mA). Figure 4 and Figure 7 show the supply current per channel as a function of data rate for an input and unloaded output. Figure 5 and Figure 8 show the total IDD1 and IDD2 supply currents as a function of data rate for ADuM3154 channel configurations with all high speed channels running at the same speed and the low speed channels at idle. INSULATION LIFETIME All insulation structures eventually break down when subjected to voltage stress over a sufficiently long period. The rate of insulation degradation is dependent on the characteristics of the voltage waveform applied across the insulation, as well as the materials and material interfaces. Two types of insulation degradation are of primary interest: breakdown along surfaces exposed to the air and insulation wear out. Surface breakdown is the phenomenon of surface tracking and the primary determinant of surface creepage requirements in system level standards. Insulation wear out is the phenomenon where charge injection or displacement currents inside the insulation material cause long-term insulation degradation. Rev. A | Page 20 of 22 |
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