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QID3320004 Datasheet(PDF) 5 Page - Powerex Power Semiconductors

Part # QID3320004
Description  Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
PDF  6 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

QID3320004 Datasheet(HTML) 5 Page - Powerex Power Semiconductors

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QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/14 Rev. 6
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
COLLECTOR-EMITTER VOLTAGE, V
CE, (VOLTS)
CAPACITANCE VS. VCE
(TYPICAL)
100
102
100
10
1.0
0.1
101
VGE = 0V
Tj = 25°C
f = 100 kHz
Cies
Coes
Cres
0
100
50
150 200 250 300 350
10-1
GATE CHARGE, Q
G, (C)
GATE CHARGE VS. VGE
20
0
5
10
15
0
-5
-10
-15
0.5
2.0
1.5
1.0
VCE = 1800V
IC = 170A
Tj = 25°C
COLLECTOR CURRENT, I
C, (AMPERES)
1100
1000
800
900
100
200
300
400
500
600
700
0
VCC = 1800V
VGE = ±15V
RG(on) = 15
RG(off) = 50Ω
Ls = 100nH
Tj = 150°C
Inductive Load
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Erec
0
100
50
150 200 250 300 350
COLLECTOR CURRENT, I
C, (AMPERES)
1000
800
900
100
200
300
400
500
600
700
0
VCC = 1800V
VGE = ±15V
RG(on) = 15
RG(off) = 50
Ls = 100nH
Tj = 125°C
Inductive Load
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
Erec
Eon
Eoff



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