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QID3320004 Datasheet(PDF) 6 Page - Powerex Power Semiconductors

Part # QID3320004
Description  Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
PDF  6 Pages
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Manufacturer  POWEREX [Powerex Power Semiconductors]
Direct Link  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

QID3320004 Datasheet(HTML) 6 Page - Powerex Power Semiconductors

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QID3320004
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
6
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/14 Rev. 6
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
COLLECTOR EMITTER VOLTAGE, V
CES, (VOLTS)
500
400
300
200
100
0
2000
1000
3000
0
REVERSE BIAS SAFE
OPERATING AREA (TYPICAL)
VCC ≤ 2500V
VGE = ±15V
RG(off) = 50Ω
Tj = 150°C
4000
EMITTER-COLLECTOR VOLTAGE, V
EC, (VOLTS)
500
400
300
200
100
0
2000
1000
3000
0
FREE-WHEEL DIODE
REVERSE RECOVERY SAFE
OPERATING AREA (TYPICAL)
VCC ≤ 2500V
di/dt = 1kA/µs
Tj = 150°C
4000
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
1.2
1.0
10-1
10-2
10-3
100
101
0.8
0.6
0.4
0.2
0
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.060°C/W
(IGBT)
Rth(j-c) =
0.096°C/W
(FWDi)



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