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QID3320004 Datasheet(PDF) 1 Page - Powerex Power Semiconductors |
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QID3320004 Datasheet(HTML) 1 Page - Powerex Power Semiconductors |
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1 / 6 page ![]() Dual IGBT HVIGBT Module 200 Amperes/3300 Volts 1 11/14 Rev. 6 QID3320004 Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Outline Drawing and Circuit Diagram Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice. The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product. Dimensions Inches Millimeters A 5.51 140.0 B 2.87 73.0 C 1.50 38.0 D 4.88±0.01 124.0±0.25 E 2.24±0.01 57.0±0.25 F 1.18 30.0 G 0.43 11.0 H 1.07 27.15 J 0.20 5.0 K 1.65 42.0 Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clear- ance distance for many demanding applications like medium voltage drives and auxiliary traction applications. Features: -40 to 150°C Extended Temperature Range 100% Dynamic Tested 100% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC 60077-1 Rugged SWSOA and RRSOA UL Recognized (E78240) Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction Dimensions Inches Millimeters L 0.69±0.01 17.5±0.25 M 0.38 9.75 N 0.20 5.0 P 0.22 5.5 Q 1.04 26.5 R 0.16 4.0 S M5 Metric M5 T 0.63 Min. 16.0 Min. U 0.11 x 0.02 2.8 x 0.5 V 0.28 Dia. 7.0 Dia. 3 2 1 N J (2TYP) S NUTS (3TYP) H H V (4TYP) M G (3TYP) R (DEEP) E B K (3TYP) L (2TYP) P U (5TYP) T (SCREWING DEPTH - 3 TYP) Q F F D A C 1 2 3 4 5 6 7 8 |
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