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STM4417 Datasheet(PDF) 1 Page - M.S. Kennedy Corporation |
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STM4417 Datasheet(HTML) 1 Page - M.S. Kennedy Corporation |
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1 / 7 page  S mHop Microelectronics C orp. a STM4417 50 °C/W THERMAL CHARACTERISTICS PRODUCT SUMMARY VDSS ID RDS(ON) (mW) Max -40V -10A 19 @ VGS=-4.5V 14 @ VGS=-10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. P-Channel Enhancement Mode Field Effect Transistor Thermal Resistance, Junction-to-Ambient R JA www.samhop.com.tw Apr,24,2013 1 Details are subject to change without notice. S O-8 1 a Ver 1.0 Green Product 4 3 2 1 D D D D G S S 5 6 7 8 S Symbol VDS VGS IDM A ID Units Parameter -40 V V ±20 Gate-Source Voltage Drain-Source Voltage ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous -Pulsed b A TA=25°C W PD °C -55 to 150 TA=25°C Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG TA=70°C A EAS mJ Single Pulse Avalanche Energy d TA=70°C W a a 56 -10 -56 2.5 -8 1.6 e |
Similar Part No. - STM4417 |
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Similar Description - STM4417 |
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