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ECP200 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # ECP200
Description  2.0 WATT POWER AMPLIFIER
PDF  5 Pages
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

ECP200 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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EiC Corp. A Subsidiary of EiC Enterprises, Ltd.
45738 Northport Loop West, Fremont, CA 94538
Phone: (510) 979-8999
Fax: (510) 979-8902
www.eiccorp.com
1
Revision A
SS-000536-000
ECP200
2.0 WATT POWER AMPLIFIER
PRELIMINARY DATA SHEET
Electrical Specifications
Test Conditions: Ta = 25
oC, V
CC = +5 V Icq = 800 mA (class A operation)
1800 - 2300MHz
33 dBm P1dB
High Linearity: 49 dBm OIP3
High Efficiency: PAE > 50%
11 dB Linear Gain
Single 5V Supply
High Reliabilty
Class A or AB operation
Product Features
Applications
Product Description
The ECP200 is a single stage, 2.0W power amplifier that offers excellent linearity and efficiency. This device was
developed using EiC’s proprietary InGaP Heterojunction Bipolar Transistor (HBT) process. The devices have a 50
Ohms input impedance and pre-matched output. It is optimized for multicarriers applications and allows customers
to use class A or class AB operations. The devices can be easily matched in output side to obtain the optimum
power, linearity and efficiency. The product is targeted for use as driver amplifier for wireless infrastructure applications.
It is available in two surface-mount plastic packages: QFN-16 (4x4mm) and SOIC-8.
CAUTION!
SENSITIVE ELECTRONIC DEVICE
Basestations and Repeaters
CDMA/GSM/TDMA/EDGE
PCS/CDMA2000/IMT2000/UMTS
Multi-carrier systems
Packages Available
QFN-16 (4x4mm)
SOIC-8
MIN.
TYP.
MAX.
F
Frequency
1800
2300
MHz
f = 1960MHz
11.0
f = 2140MHz
10.5
f = 1960MHz
33.0
f = 2140MHz
33.0
f = 1960MHz
49.0
f = 2140MHz
48.0
ACPR1
Pout = 24.5dBm (WCDMA)
f = 2140MHz
-45
dBc
Note 2
Gain Flatness (120MHz Band)
f = 2140MHz
±0.5
dB
RL in
Input Return Loss, 50 Ohm
f = 2000MHz
8.0
dB
RL out
Output Return Loss, 50 Ohm
f = 2000MHz
10.0
dB
Icop
Operational Current @ P1dB
950
mA
Vde
Device Voltage
5.0
Vdc
dB
Gain (Small Signal)
TEST CONDITION
LIMITS
UNIT
PARAMETER
Note 2: ACPR measured for 3GPP test model 1, 64 DPCH. Channel Bandwidth = 3.84MHz. Frequency offset: +/- 5MHz.
Note 1: OIP3 = Pout (by power meter, total 2-tone power) + (IM3(dB))/2) - 3dB
SYMBOL
OIP3
G
P1dB
Output Power @ 1dB
Compression
dBm
Note 1
Output Third Order Intercept
dBm


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