NHQ035C datasheet(40/42 Pages) RENESAS

40 / 42 page

PD166028T1K Datasheet

6. Application example in principle

R07DS1162EJ0200 Rev.2.00

Page 40 of 40

May 22, 2015

6. Application example in principle

RIN, RSEN, RAN values are in range of 2k to 50kΩ depending microcontroller while R_L value is typically 4kΩ.

If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s

value is typically 100kΩ

GND Network recommendation

RGND

Vbat

VCC

GND

VCC

GND

Vbat

In case of V_loaddump < 35V

In case of 35V < V_loaddump < 42V

External diode is recommended in order to

prevent reverse current toward control logic

part at reverse battery condition.

Note: If other component is installed to prevent reverse current at reverse battery condition,

diode is not required in GND Network.

Note: Approx. 1kΩ additional resistor in parallel with the diode is recommended if Vf vaule of

the diode is high.

External diode and resistor are recommended

in order to prevent reverse current toward

control logic part at reverse battery condition

and limit the current through ZDAZ at load

dump condition. 100Ω is recommended as

RGND.

NHQ035C Datasheet(PDF) 40 Page - Renesas Technology Corp