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COP8CCE9IMT7/NOPB Datasheet(PDF) 13 Page - Texas Instruments

Part # COP8CCE9IMT7/NOPB
Description  8-Bit CMOS Flash Microcontroller with 8k Memory, Virtual EEPROM
PDF  101 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

COP8CCE9IMT7/NOPB Datasheet(HTML) 13 Page - Texas Instruments

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COP8CCE9
www.ti.com
SNOS978J – JUNE 2001 – REVISED MARCH 2013
DC Electrical Characteristics (
−40°C ≤ T
A≤ +125°C) (continued)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
All Others
Source (Weak Pull-Up Mode)
VCC = 4.5V, VOH = 3.8V
−9
μA
Source (Push-Pull Mode)
VCC = 4.5V, VOH = 3.8V
−6.3
mA
Sink (Push-Pull Mode) (4)
VCC= 4.5V, VOL = 1.0V
9
mA
Allowable Sink and Source Current per Pin
12
mA
TRI-STATE Leakage
VCC = 5.5V
−3
+3
μA
Maximum Input Current without Latchup (5)
±200
mA
RAM Retention Voltage, VR (in HALT Mode)
2.0
V
Input Capacitance
7
pF
Voltage on G6 to Force Execution from Boot ROM (6)
G6 rise time must be slower
2 x VCC
VCC + 7
V
than 100 ns
G6 Rise Time to Force Execution from Boot ROM
100
nS
Input Current on G6 when Input > VCC
VIN = 11V, VCC = 5.5V
500
μA
(5)
Pins G6 and RESET are designed with a high voltage input network. These pins allow input voltages > VCC and the pins will have sink
current to VCC when biased at voltages > VCC (the pins do not have source current when biased at a voltage below VCC). These two
pins will not latch up. The voltage at the pins must be limited to < 14V. WARNING: Voltages in excess of 14V will cause damage to the
pins. This warning excludes ESD transients.
(6)
Vcc must be valid and stable before G6 is raised to a high voltage.
Copyright © 2001–2013, Texas Instruments Incorporated
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