BLF647 datasheet(5/16 Pages) PHILIPS

5 / 16 page

2001 Nov 27

Philips Semiconductors

Product speciﬁcation

UHF power LDMOS transistor

BLF647

Application at 600 MHz

handbook, halfpage

(dB)

(%)

100

150

200

PL (PEP) (W)

MGW540

Fig.3

Power gain and drain efficiency as functions

of peak envelope load power; typical

values.

Th =25 °C; VDS = 28 V; IDQ =1A.

2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB)

measured in 600 MHz test circuit.

handbook, halfpage

dim

(dBc)

100

150

200

PL (PEP) (W)

−20

−60

−80

−40

MGW541

Fig.4

Intermodulation distortion as a function of

peak envelope output power; typical values.

Th =25 °C; VDS = 28 V; IDQ =1A.

2-tone: f1 = 600 MHz (−6 dB); f2 = 600.1 MHz (−6 dB)

measured in 600 MHz test circuit.

handbook, halfpage

(dB)

(%)

100

150

200

PL (W)

MGW542

Fig.5

Power gain and drain efficiency as functions

of load power; typical values.

Th =25 °C; VDS = 28 V; IDQ = 1 A; CW, class-AB; f = 600 MHz;

measured in 600 MHz test circuit.

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